Conduction-band states of thin InAs/AlSb quantum wells
Identifieur interne : 01D995 ( Main/Repository ); précédent : 01D994; suivant : 01D996Conduction-band states of thin InAs/AlSb quantum wells
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Abstract
We study the conduction-band states of thin InAs quantum wells confined by relatively thick AlSb barriers with a ten-band tight-binding model, considering the results in the context of recent experiments. For the 1 monolayer well structure, we find that the wave function has significant evanescent-state contributions both in the well and barriers, while we find that the wave function of the 5 monolayer device is mostly Γ-like throughout.
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Boykin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, Alabama 35899</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Alabama</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">94-0281230</idno><date when="1994-03-21">1994-03-21</date><idno type="stanalyst">PASCAL 94-0281230 AIP</idno><idno type="RBID">Pascal:94-0281230</idno><idno type="wicri:Area/Main/Corpus">01EE05</idno><idno type="wicri:Area/Main/Repository">01D995</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. Phys. 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For the 1 monolayer well structure, we find that the wave function has significant evanescent-state contributions both in the well and barriers, while we find that the wave function of the 5 monolayer device is mostly Γ-like throughout.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. Phys. 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